1 mbr2535ct, MBR2545CT switchmode power rectifiers the mbr2535ct/45ct series uses the schottky barrier principle with a platinum barrier metal. these state ? of ? the ? art devices have the following features: features ? guardring for stress protection ? low forward voltage ? 175 c operating junction temperature ? pb ? free packages are available* mechanical characteristics ? case: epoxy, molded ? epoxy meets ul 94 v ? 0 @ 0.125 in ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds to ? 220ab case 221a plastic 3 4 1 schottky barrier rectifiers 30 amperes 35 and 45 volts 1 3 2, 4 2 marking diagram a = assembly location y = year ww = work week b25x5 = device code x = 3 or 4 g = pb ? free package aka = diode polarity ay ww b25x5g aka device package shipping ordering information mbr2535ct to ? 220 50 units/rail MBR2545CT to ? 220 50 units/rail mbr2535ctg to ? 220 (pb ? free) 50 units/rail MBR2545CTg to ? 220 (pb ? free) 50 units/rail www.kersemi.com
mbr2535ct, MBR2545CT www.kersemi.com 2 rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage mbr2535ct MBR2545CT v rrm v rwm v r 35 45 v average rectified forward current (rated v r , t c = 160 c) i f(av) 30 a peak repetitive forward current, per diode leg (rated v r , square wave, 20 khz, t c = 150 c) i frm 30 a non ? repetitive peak surge current per diode leg (surge applied at rated load conditions, halfwave, single phase, 60 hz) i fsm 150 a peak repetitive reverse surge current (2.0 s, 1.0 khz) i rrm 1.0 a storage temperature range t stg ? 65 to +175 c operating junction temperature (note 1) t j ? 65 to +175 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s esd ratings: machine model = c esd ratings: human body model = 3b esd >400 >8000 v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . thermal characteristics (per leg) characteristic symbol value unit thermal resistance, ? junction ? to ? case ? junction ? to ? ambient (note 2) r jc r ja 1.5 50 c/w 2. when mounted using minimum recommended pad size on fr ? 4 board. electrical characteristics (per diode) symbol characteristic condition min typ max unit v f instantaneous forward voltage (note 3) i f = 15 amp, t j = 25 c i f = 15 amp, t j = 125 c i f = 30 amp, t j = 25 c i f = 30 amp, t j = 125 c ? ? ? ? ? 0.50 ? 0.65 0.62 0.57 0.82 0.72 v i r instantaneous reverse current (note 3) rated dc voltage, t j = 25 c rated dc voltage, t j = 125 c ? ? ? 9.0 0.2 25 ma 3. pulse test: pulse width = 300 s, duty cycle 2.0%.
mbr2535ct, MBR2545CT www.kersemi.com 3 110 t c , case temperature ( c) 20 8.0 4.0 0 t a , ambient temperature ( c) 20 0 48 24 16 8.0 0 40 8.0 16 0 i f , average forward current (amps) 32 16 12 8.0 4.0 0 12 i i f(av) , average forward current (amps) 120 130 160 180 60 80 180 p 20 40 24 28 , average forward current (amps) f(av) 4.0 28 32 36 20 24 square wave dc square wave dc 16 12 24 48 28 28 20 12 4.0 100 120 140 , average power dissipation (watts) f(av) rated v r applied square wave dc rated voltage applied r jc = 1.5 c/w r ja = 16 c/w (with to-220 heat sink) r ja = 60 c/w (no heat sink) square wave dc t j = 125 c (capacitativeload) i pk i av 5.0 10 20 (resistiveload) i pk i av figure 1. typical forward voltage, per leg figure 2. typical reverse current, per leg 0.6 0 v f , instantaneous forward voltage (volts) 1000 10 v r , reverse voltage (volts) 0 0.2 0.04 0.02 0.002 i f , instantaneous forward current (amps) i 1.0 0.2 0.4 0.8 10 20 30 40 0.1 0.4 1.0 0.1 1.0 50 , reverse current (ma) r 4.0 2.0 10 20 100 40 200 t j = 125 c 150 c 25 c t j = 150 c 125 c 100 c 100 0.01 0.004 25 c 75 c 1.6 1.2 1.4 1.8 figure 3. current derating, per device figure 4. current derating, per device figure 5. forward power dissipation 140 150 170 32 36 40 44 160 32 36 40 44
mbr2535ct, MBR2545CT http://onsemi.com 4 package dimensions to ? 220 case 221a ? 09 issue af notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. style 6: pin 1. anode 2. cathode 3. anode 4. cathode dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j
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